Vol. 1 No. 1 (2018): Vol 1, Iss 1, Year 2018
Articles

Enhancement of mechanical, electrical, optical and structural properties based on potassium hexacyano ferrate single crystals

Vinoth E
Raman Research Lab, PG & Research Department of Physics, Government Arts College,Tiruvannamalai-606 603, India
Suresh T
Raman Research Lab, PG & Research Department of Physics, Government Arts College,Tiruvannamalai-606 603, India
Mullai R U
Raman Research Lab, PG & Research Department of Physics, Government Arts College,Tiruvannamalai-606 603, India.
Arul jothi R
Raman Research Lab, PG & Research Department of Physics, Government Arts College,Tiruvannamalai-606 603, India
Gopinath S
Raman Research Lab, PG & Research Department of Physics, Government Arts College,Tiruvannamalai-606 603, India.
Kanagasabapathy L
PG & Research Department of Physics , Arignar Anna Government Arts College, Villupuram-605 602, India.
Vetrivel S
Raman Research Lab, PG & Research Department of Physics, Government Arts College,Tiruvannamalai-606 603, India
Published June 30, 2018
Keywords
  • Single crystal XRD, powder XRD analysis, FT-IR, UV-Vis-NIR spectrum, thermal analysis, microhardness and dielectric properties.

Abstract

Single crystal of potassium hexacyano ferrate (PHF) have been successfully grown by the slow evaporation technique at room temperature which has dimensions 13 ×10 ×3 mm3. The grown crystal was characterized structurally, optically, thermally, mechanically and electrically. Lattice parameters of the grown crystal were determined by X-ray diffraction analysis. The functional groups present in the crystal were identified using Fourier Transform Infrared spectral analysis. UV-Vis-NIR spectrum was recorded to estimate the UV cut-off wavelength and transparency. Second harmonic generation study confirms the NLO property. Thermal stability and decomposition of the crystal has been studied by TG/DTA analysis. Microhardness measurement indicates that the grown crystal exhibits normal indentation size effect. The frequency and temperature dependence of dielectric constant and dielectric loss were also studied.

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